MRFE6S9060NR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(TC
= 25
°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture Optimized for 920-960 MHz, 50 ohm system) V
DD
= 28 Vdc,
IDQ
= 500 mA, Pout
= 21 W Avg., f = 920-960 MHz, GSM EDGE Signal
Power Gain
Gps
?
20
?
dB
Drain Efficiency
ηD
?
46
?
%
Error Vector Magnitude
EVM
?
1.5
?
%
Spectral Regrowth at 400 kHz Offset
SR1
?
-62
?
dBc
Spectral Regrowth at 600 kHz Offset
SR2
?
-78
?
dBc
Typical CW Performances
(In Freescale GSM Test Fixture Optimized for 920-960 MHz, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 500 mA,
Pout
= 60 W, f = 920-960 MHz
Power Gain
Gps
?
20
?
dB
Drain Efficiency
ηD
?
63
?
%
Input Return Loss
IRL
?
-12
?
dB
Pout
@ 1 dB Compression Point
(f = 940 MHz)
P1dB
?
67
?
W
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, IDQ
= 450 mA, 865-900 MHz Bandwidth
Video Bandwidth @ 60 W PEP Pout
where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
?
3
?
MHz
Gain Flatness in 35 MHz Bandwidth @ Pout
= 14 W Avg.
GF
?
0.27
?
dB
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
?
0.011
?
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
?
0.088
?
dBm/°C
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